Undergraduate Research in the Nino Research Group
In January 2024 I started working with the Nino Research Group (NRG) with Dr. Juan C. Nino as my PI. During this time I have worked on the electrical characterization of semiconductors with Chaitanya Sharma a PhD candidate at the University of Florida. I have contributed data to two published two papers.
Research in Electrical Characterization
Resistive Switching with HZO and SFO
Resistive Random-Access Memory or ReRAM is a next-generation data storage technology that could revolutionize the industry. During my time in the NRG I looked ReRAM ferroelectric memory using Halfnium Zirconium Oxide (HZO). Starting in the fall of 2024 I worked on measuring the electrical proporties of these materials before and after irradiation. These results contributed to a paper published last year. At the same time I also looked at the competing ReRAM device using a Strontium Ferroua Oxide (SFO) substrate comparing the eletrical properties of two differently oriented planes. This also contributed to a paper published at around the same time
Research
Undergraduate research photos and highlights